Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation
Verlag: Books on Demand
sofort lieferbar als Download
Ihr eigenes Buch!
Werden Sie Autor mit BoD und bringen Sie Ihr Buch und E-Book in den Buchhandel.Mehr erfahren
Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination.
The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm²/Vs is estimated. This value is comparable to device with additional overgrowth of the channel.
Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.
Es sind momentan noch keine Pressestimmen vorhanden.